It consists of two layers of semiconductors. The ordinary signal diodes have a junction formed by p type semiconductor and n type semiconductor, the lead joining p-type is called the anode and the other side lead joining the n-type is called the cathode.. c) Sensitive receiver View Answer, 9. The material used to fabricate IMPATT diodes is GaAs since they have the highest efficiency in all aspects. d) None of the mentioned The resonant frequency of an IMPATT diode is given by: Participate in the Sanfoundry Certification contest to get free Certificate of Merit. b) Vd/l a) 12 GHz c) Remains unchanged c) Spectrum analyzer d) average resistance The laser diode is a semiconductor device about 250 to 500 μm long by about 60 μm thick mounted on a copper or ceramic heat sink. In order to achieve high current density, a compromise in _______is made in a TRAPATT diode. 1. introduction The TRAPATT (Tra pped P lasma A valanche T riggered T ransit) diode is another microwave energy which is used as both amplifier and oscillator. View Answer, 5. b) False b) average voltage View Answer, 10. Participate in the Sanfoundry Certification contest to get free Certificate of Merit. 2.1 Laser Diode Basics. The TRAPATT diode's diameter ranges from as small as 50 μm for CW operation to 750 μm at lower frequency for highpeak- power devices. When a reverse bias voltage exceeding the breakdown voltage is applied to an IMPATT diode, it results in: To prevent an IMPATT diode from burning, a constant bias source is used to maintain _______ at safe limit. d) None of the mentioned a) Vd/2l _________ gives a frequency domain representation of a signal, displaying the average power density versus frequency. View Answer, 4. d) High noise figure d) none of the mentioned To practice all areas of Microwave Engineering, here is complete set of 1000+ Multiple Choice Questions and Answers. 1. Impact ionization, avalanche and breakdown phenomena form the basis of many very interesting and important semiconductor devices, such as avalanche photodiodes, avalanche transistors, suppressors, sharpening diodes (diodes with delayed breakdown), as well as IMPATT and TRAPATT diodes. What is claimed is 1. b) false d) One b) False c) average bias voltage c) Operating frequency d) none of the mentioned c) high reverse saturation current ... there are two semiconductor diodes A and B one is zener other is avalanche. a) High bias voltage b) Size It has very small interelectrode capacitances.

This page covers advantages and disadvantages of Diode. TRAPATT Diode. The diodes are classified into different types based on their working principles and characteristics. Sanfoundry Global Education & Learning Series – Microwave Engineering. An IMPATT diode (IMPact ionization Avalanche Transit-Time diode) is a form of high-power semiconductor diode used in high-frequency microwave electronics devices. In PIN photodiode, an addition layer called intrinsic semiconductor is placed between the p-type and n-type semiconductor to increase the minority carrier current. A tunnel diode is a p-n junction diode with a doping profile that allows electron tunneling through a narrow energy band gap. c) Vd/2πl a) true View Answer, 3. Schottky diode can switch on and off much faster than the p-n junction diode. c) 2.4 V TRAPATT DIODE Derived from the Trapped Plasma Avalanche … View Answer, 10. If a large reverse voltage is applied across the diode, the space charge region is widened from the N + P junction to the IP + junction. Explanation: Inside a coaxial resonator, the TRAPATT diode is normally … The semiconductor diode is a widely used electronics component found in many electronic circuit designs today. Schottky barrier diode is a sophisticated version of the point contact ______________ View Answer. View Answer, 9. View Answer, 5. Of the two terminals, one terminal is connected to a p-type semiconductor material and the other terminal to an n-type semiconductor.Depending on the physical structure and the type of semiconductor materials used in the construction of a diode, many different diode variants are possible. View Answer, 6. a) two 1. As the area of rectifying contact goes on increasing, the forward resistance of the Schottky diode: The colour of the light emitted in LED is determined by the semiconductor materials that form the diode’s PN junction. b) false It operates efficiently below 10 GHz and need greater voltage swing for its operation. c) GaAs diode An apparent 3π/2 transit angle of the injected carrier that traverses the semiconductor depletion region. View Answer, 7. 1) serves as the gain medium of an ECL. ratings are 6.2v and 24v respectively than? A microwave generator which operates between hundreds of MHz … Theory & Design of Ferrimagnetic Components, here is complete set of 1000+ Multiple Choice Questions and Answers, Prev - Microwave Engineering Questions and Answers – GUNN Diodes, Next - Microwave Engineering Questions and Answers – Applications of RF Diodes, VLSI Questions and Answers – Scan Design Techniques-2, VLSI Questions and Answers – Built-in Self Test, Waste Water Engineering Questions and Answers, Engineering Drawing Questions and Answers, Engineering Chemistry I Questions and Answers, Engineering Chemistry II Questions and Answers, Chemical Engineering Questions and Answers, Engineering Physics I Questions and Answers, Best Reference Books – Technology, Engineering and Sciences, Analog Communications Questions and Answers, Fluidization Engineering Questions and Answers, Basic Electrical Engineering Questions and Answers, Linear Integrated Circuits Questions and Answers, Engineering Physics II Questions and Answers, Electronic Devices and Circuits Questions and Answers, Microwave Engineering Questions and Answers. d) 6.5 V View Answer, 8. If the length of the intrinsic region in IMPATT diode is 2 µm and the carrier drift velocity are 107 cm/s, then the drift time of the carrier is: d) None of the mentioned Semiconductor, any of a class of crystalline solids intermediate in electrical conductivity between a conductor and an insulator.Semiconductors are employed in the manufacture of various kinds of electronic devices, including diodes, transistors, and integrated circuits.Such devices have found wide application because of their compactness, reliability, power efficiency, and low cost. a) Mixer View Answer, 8. b) IF amplifier They have negative resistance and are used as oscillators and amplifiers at microwave frequencies. View Answer, 2. The higher … In accordance with the invention, diode 14 is typically a Trapatt diode; that is, a diode capable of sustaining Trapatt mode oscillations. This set of Microwave Engineering Multiple Choice Questions & Answers (MCQs) focuses on “Applications of RF Diodes”. a) 10-11 seconds For a typical Read diode the n-layer may be only 1 to 2 µm thick, and the intrinsic layer may be between 2 and 20µm thick. • In american system, code starts with 1N followed by serial number of the diode. All Rights Reserved. At this time we are unable to process approval. b) Oscilloscope Advantage of Schottky diode over silicon crystal diode is the presence minority charge carriers. TRAPATT DIODE ANKIT KUMAR PANDEY M.TECH 3rd sem ALLAHABAD UNIVERSITY 1 ankit_pandey Current is injected through a top ohmic contact. The electric field in the entire space charge region is the largest at N + P. a) true Avalanche diodes are semiconductor devices that use the avalanche multiplication effect and carrier transit time effect in the PN junctions to generate microwave oscillations. b) 2×10-11 seconds View Answer, 11. b) 6.4 V The Tunnel diodes are heavily doped p-n junction and its impurity concentrations of 1019 to 1020 atoms/cm3 are used. c) Frequency sensitive c) four c) Four A four layer semiconductor diode whose characteristic at the first quadrant is similar to that of a silicon-controlled rectifier (SCR). The full form of TRAPATT diode is TRApped Plasma Avalanche Triggered Transit diode. The most important functional unit of a spectrum analyzer is: c) 2.5×10-11 seconds IMPATT diodes employ impact ionization technique which is a noisy mechanism of generating charge carriers. b) Low operational bandwidth An TRAPATT diode (T rapped P lasma A valanche Triggered Transit- T ime), is a very high efficiency microwave generator, capable of operating from several hundred M Hz to several GHz. b) three The rapid increase in terminal current with applied voltage (above 30 V) is caused by thermionic hole injection into the semiconductor as the depletion layer of the reverse-biased contact reaches through the entire device thickness. ... Rate effect in four layer diodes. View Answer, 3. © 2011-2021 Sanfoundry. a) average current The IMPATT diode or IMPact Avalanche Transit Time diode is an RF semiconductor device that is used for generating microwave radio frequency signals. Trapatt diode 1. a) 10.1 % They operate at frequencies of about 3 and 100 GHz, or higher. a) Gain The tunnel diode is a negative resistance semiconductor p-n junction diode because of the tunnel effect of electrons in the p-n junction. d) Network analyzer To practice all areas of Microwave Engineering, here is complete set of 1000+ Multiple Choice Questions and Answers. b) false The number of semiconductor layers in a TRAPATT diode is: However, TRAPATT diode has a number of advantages and also a number of applications. a) true d) 24 GHz b) Three a) CRO b) break down of depletion region This set of Microwave Engineering Multiple Choice Questions & Answers (MCQs) focuses on “IMPATT and BARITT Diodes”. The central region where large number of positive and negative ions on n-region and p-region respectively accumulates is called Depletion Layer. It consists of a p+ region and n+ layers at the two ends. The depletion layer barrier at the junction is very thin 100 ̇ A or 10-6 cm. One layer is doped with P-type material and the other layer with N-type material. The figure below depicts the structure of an ordinary diode and its symbol. In between these layers, a p type layer and an intrinsic region is sandwiched. Principles of Operation :- A … View Answer, 4. b) 25 GHz All Rights Reserved. Google has not … If you are a student or simply want to learn how to solve Semiconductor Diode tasks, please visit this sectionof our website where you can find a wide variety of electronic tasks. Gunn Diode. The substrate 1 and the semiconductor layers 2, 3, 4 are chosen analogously to embodiment 1 with regard to the layer thickness and layer composition. • In conventional system, there are two letters at the start, first one indicates semiconductor material (A = germanium, B = Silicon) and the second letter indicates applications of diode (A= signal diode, Y = Rectifier diode, Z = Zener diode). In a high-frequency oscillator of the type comprising a semiconductor junction diode, means for reverse biasing the diode to avalanche breakdown, means for defining a semiconductor current transit region, said diode being located in an oscillator circuit resonant at a frequency related to the transit time of the transit region, the improvement wherein: b) Decreases TRAPATT diode is normally mounted at a point inside a coaxial resonator where there is minimum RF voltage swing. a) Two Multiple Choice Questions and Answers on Semiconductor Diode Multiple Choice Questions and Answers By Sasmita January 9, 2020 In addition to reading the questions and answers on my site, I would suggest you to check the following, on amazon, as well: They range from diodes with opti… Diodes are the simplest semiconductor device having only two layers, two terminals, and one junction.. c) 30 GHz View Answer, 11. Basically, this diode is normally used as a microwave oscillator, however, it has the advantage of a better level of efficiency normally the DC to RF signal alteration efficiency may be in the area of 20 to 60%. c) Low gain d) High forward biased current View Answer, 2. 418. b) Silicon crystal diode a) True a) True Join our social networks below and stay updated with latest contests, videos, internships and jobs! Join our social networks below and stay updated with latest contests, videos, internships and jobs! A metal-semiconductor junction formed between a metal and n-type semiconductor creates a barrier or depletion layer known as a schottky barrier. If the critical field in a Gunn diode oscillator is 3.2 KV/cm and effective length is 20 microns, then the critical voltage is: For very high frequency operation, these dimensions are reduced. d) none of the mentioned A Diode is an electronic component that has two terminals and allows current to flow only in one direction. If the length of the intrinsic region in IMPATT diode is 2 µm and the carrier drift velocity are 107 cm/s, then the nominal frequency of the diode is: A PN junction photodiode is made of two layers namely p-type and n-type semiconductor whereas PIN photodiode is made of three layers namely p-type, n-type and intrinsic semiconductor. higher efficiency. a) avalanche multiplication Sanfoundry Global Education & Learning Series – Microwave Engineering. b) False © 2011-2020 Sanfoundry. With the ability to operate at frequencies between about 3 and 100 GHz or more, one of the main advantages of this microwave diode is the relatively high power capability of the IMPATT diode. d) 15.2 % b) 10.21 % layer type region vertical diode doped Prior art date 2013-07-18 Legal status (The legal status is an assumption and is not a legal conclusion.

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